IPP60R099CPA

IPP60R099CPA datasheet

Маркировка

IPP60R099CPA
Производитель

Infineon Technologies
Описание

Infineon Technologies IPP60R099CPA Configuration: Single Continuous Drain Current: 31 A Continuous Drain Current Id: 31A Current - Continuous Drain (id) @ 25?° C: 31A Drain Source Voltage Vds: 600V Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 80nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951659 Input Capacitance (ciss) @ Vds: 2800pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole On Resistance Rds(on): 99mohm Package / Case: TO-220-3 (Straight Leads) Power - Max: 255W Power Dissipation: 255000 mW Rds On (max) @ Id, Vgs: 105 mOhm @ 18A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.099 Ohm @ 10 V Rohs Compliant: Yes Series: CoolMOS?„? Threshold Voltage Vgs Typ: 3V Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3.5V @ 1.2mA Other Names: SP000315418
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10 шт.
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